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關(guān)于 EverSpin Technologies, Inc.

Everspin Technologies, Inc. 總部位于美國(guó)亞利桑那州的錢(qián)德勒，是設(shè)計(jì)、制造和銷售離散、嵌入式磁阻 RAM (MRAM) 和轉(zhuǎn)動(dòng)扭矩 MRAM (ST-MRAM) 的全球領(lǐng)導(dǎo)者，其產(chǎn)品針對(duì)那些數(shù)據(jù)的持久性和完整性、低延遲和安全性至關(guān)重要的行業(yè)和應(yīng)用。憑借在數(shù)據(jù)中心、云存儲(chǔ)、能源、工業(yè)、汽車和運(yùn)輸市場(chǎng)中部署了超過(guò) 7,000 萬(wàn)個(gè) MRAM 和 ST-MRAM 產(chǎn)品，Everspin 奠定了最強(qiáng)大、增長(zhǎng)最快的 MRAM 用戶基礎(chǔ)。

Everspin Technologies, Inc.

Headquartered in Chandler, Arizona, Everspin Technologies, Inc. is the worldwide leader in designing, manufacturing, and commercially shipping discrete and embedded Magnetoresistive RAM (MRAM) and Spin-transfer Torque MRAM (STT-MRAM) into markets and applications where data persistence and integrity, low latency, and security are paramount.  With over 120 Million MRAM and STT-MRAM products deployed in data center, cloud storage, energy, industrial, automotive, and transportation markets, Everspin has built the strongest and fastest growing foundation of MRAM users in the world.  

Core Competence with MRAM: From Perpendicular to Field-Switched 

Everspin’s knowledge and experience in magnetic memory design, manufacture and delivery into relevant applications is unique within the semiconductor industry.  With an intellectual property portfolio of more than 600 active patents and applications, Everspin leads the market in development of both in-plane and perpendicular magnetic tunnel junction (MTJ) STT-MRAM bit cells.  

Manufacturing - The Capacity to Deliver

In 2014, Everspin partnered with GLOBALFOUNDRIES for full turn-key 300mm high-volume production of in-plane and perpendicular MTJ ST-MRAM on advanced technology nodes including 40nm, 28nm and beyond.  In addition, Everspin owns and operates an integrated magnetic fabrication line located in Chandler, Arizona, where Everspin produces MRAM products are based on 180nm, 130nm, and 90nm process technology nodes. Product package and test operations are located in China, Taiwan and other Asian countries.